Vishay's new 150V MOSFET chip
Vishay Intertechnology, Inc. (NYSE: VSH) announces the launch of the new 150 V TrenchFET Gen V N-channel power MOSFET, the SiRS5700DP, in a PowerPAK SO-8S (QFN 6x5) package. Designed to enhance efficiency and power density in communication, industrial, and computing applications, the Vishay Siliconix SiRS5700DP offers a 68.3% reduction in total on-resistance compared to the previous generation device in a PowerPAK SO-8 package. Additionally, it boasts a 15.4% decrease in the product of on-resistance and gate charge (a key Figure of Merit (FOM) for MOSFETs in power conversion applications), a 62.5% reduction in RthJC, and a 179% increase in continuous drain current. The newly released device features an industry-leading on-resistance of 5.6 mΩ at 10 V and an FOM of on-resistance and gate charge product of 336 mΩ*nC, minimizing conduction-related power losses. As a result, designers can achieve higher efficiency, meeting the demands of next-generation power supplies, such as 6 kW AI server power systems.
Furthermore, the PowerPAK SO-8S package offers an ultra-low RthJC of 0.45 °C/W, enabling a continuous drain current of up to 144 A, thereby increasing power density while providing robust SOA capabilities. The SiRS5700DP is ideal for synchronous rectification, DC/DC conversion, hot-swap switching, and OR-ing functions. Typical applications include servers, edge computing, supercomputers, and data storage; communication power supplies; solar inverters; motor drives and power tools; and battery management systems. The MOSFET is RoHS compliant and halogen-free, having undergone 100% Rg and UIS testing, and conforms to the IPC-9701 standard, ensuring more reliable temperature cycling.
With a standard size of 6 mm × 5 mm, the device is fully compatible with the PowerPAK SO-8 package. Samples of the SiRS5700DP are now available, and mass production has been achieved. For ordering information, please contact your local sales office.
